wbr13003d wbr13003d wbr13003d wbr13003d 1 1 1 1 1 / 4 . cop yright@winsemi semiconductor co.,ltd.,all rights reserved high voltage fast-switching npn power transistor features features features features very high switching speed high voltage capability wide reverse bias soa built-in freewheeling diode general general general general description description description description this device is designed for high voltage, high speed switching characteristics required such as lighting system, switching mode power supply. absolute absolute absolute absolute maximum maximum maximum maximum ratings ratings ratings ratings symbol parameter test conditions value units v ces collector-emitter voltage v be = 0 700 v v ceo collector-emitter voltage i c = 1ma 400 v v ebo emitter-base voltage i e = 0.1ma 9 v i c collector current 1.5 a i cp collector pulse current 3.0 a i b base current 0.75 a i bm base peak current tp = 5ms 1.5 a p c total dissipation at tc = 25 50 w total dissipation at ta = 25 1.2 5 t j operation junction emperature - 40 ~ 150 t stg storage temperature - 55 ~ 150
wbr13003d wbr13003d wbr13003d wbr13003d 1 1 1 1 2 / 4 . cop yright@winsemi semiconductor co.,ltd.,all rights reserved electrical electrical electrical electrical characteristics characteristics characteristics characteristics (tc (tc (tc (tc = = = = 25 25 25 25 c) c) c) c) symbol parameter test conditions value units min typ max bv c b o collector-base breakdown voltage ic=0.5ma,ie=0 6 00 v bv ceo collector-base breakdown voltage ic=10ma,ib=0 400 - - v v ce(sat) collector-emitter saturation voltage ic=200ma,ib=100ma - - 1.6 v v be(sat) base-emitter saturation voltage ic=200ma,ib=100ma - - 1.2 v i cbo collector-base cutoff current vcb= 600 v,ie=0ma - - 0.1 ma i ceo collector-emitter cutoff current vce=400v,ib=0ma - - 0.1 ma i ebo emitter- base cutoff current veb=9v,ic=0ma - - 0.1 ma h fe dc current gain vce= 5 v,ic= 5 ma vce=5v, ic= 0.2 ma 0.75 0.9 ts tf storage time fall time ic= 0.1a 3 - - - 5 1 ? note: note: note: note: pulse test : pulse width 300, duty cycle 2%
wbr13003d wbr13003d wbr13003d wbr13003d 1 1 1 1 3 / 4 . cop yright@winsemi semiconductor co.,ltd.,all rights reserved ic[a],collector ic[a],collector ic[a],collector ic[a],collector current current current current ic[a].collector ic[a].collector ic[a].collector ic[a].collector current current current current fig.1dc fig.1dc fig.1dc fig.1dc current current current current gain gain gain gain fig.2 fig.2 fig.2 fig.2 saturation saturation saturation saturation voltage voltage voltage voltage h h h h fe fe fe fe - - - - i i i i c c c c v v v v cesat cesat cesat cesat - - - - i i i i c c c c v v v v besat besat besat besat - - - - i i i i c c c c
wbr13003d wbr13003d wbr13003d wbr13003d 1 1 1 1 4 / 4 . cop yright@winsemi semiconductor co.,ltd.,all rights reserved to-126 to-126 to-126 to-126 package package package package dimension dimension dimension dimension dim mm lnch m i n typ max m i n typ max a 7.5 7.9 0.295 0.311 b 10.8 11.2 0.425 0.441 c 14.2 14.7 0.559 0.579 d 2.7 2.9 0.106 0.114 e 3.8 0.150 f 2.5 0.047 0.098 g 1.2 1.5 0.059 h 2.3 0.091 i 4.6 0.181 j 0.48 0.62 0.019 0.024 k 0.7 0.86 0.028 0.034 l 1.4 0.055 3.2 0.126
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